Exploration on the removal of arsenic in silicon under electron beam melting condition. (August 2019)

• Record Type: Journal Article
• Authors: Wang, Weiyi; Shi, Shuang; Li, Pengting; Jiang, Dachuan; Yang, Yue; Li, Jiayan; Tan, Yi; Noor ul Huda Khan Asghar, H.M.
• Is Part Of: Vacuum. Volume 166(2019)
• Page Start: 191
• Page End: 195
• Publication Date: 2019-08
• Subjects: Electron beam melting -- arsenic -- Evaporation -- Removal -- Morphology; Vacuum -- Periodicals; 621.55
• DOI: 10.1016/j.vacuum.2019.05.006
• Languages: English
• ISSNs: 0042-207X

Abstract

Abstract: Arsenic is one of the main impurity elements in silicon. Electron beam melting (EBM) is considered an effective method for the purification of silicon. The removal of arsenic from silicon is performed by electron beam solidification furnace in this paper. The results demonstrated that arsenic could be removed effectively by EBM process with the average removal efficiency up to 95.4% and show the morphology of silicon ingot is less essential to distribution of arsenic impurities in the silicon ingot. The evaporation behavior of arsenic atoms is more important in the process of arsenic removal by EBM. The relationship between the evaporation coefficient of arsenic impurities and temperature was deduced. It provides a reference for further research on removal arsenic in silicon by EBM. Highlights: Evaporation mass transfer is the key step for removing arsenic impurities. The relationship between saturated vapor pressure and temperature of arsenic. The relationship between evaporation coefficient and temperature of arsenic impurities was deduced.