Toward Unusual‐High Hole Mobility of p‐Channel Field‐Effect‐Transistors (Small 37/2021). Issue 37 (16th September 2021)

• Record Type: Journal Article
• Authors: Sun, Jiamin; Zhuang, Xinming; Fan, Yibo; Guo, Shuai; Cheng, Zichao; Liu, Dong; Yin, Yanxue; Tian, Yufeng; Pang, Zhiyong; Wei, Zhipeng; Song, Xiufeng; Liao, Lei; Chen, Feng; Ho, Johnny C.; Yang, Zai‐xing
• Is Part Of: Small. Volume 17:Issue 37(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-09-16
• Subjects: carrier concentration control -- field‐effect‐transistors -- GaSb nanowires -- hole mobility -- metal‐semiconductor junction; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.202170190
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract : Field‐Effect‐Transistors Metal‐semiconductor junction is an efficient structure to control the carrier concentration of channel semiconductors, benefiting to the regulation of carrier mobility. In article number 2102323, Lei Liao, Johnny C. Ho, Zai‐xing Yang, and co‐workers demonstrate that by simply constructing the metal‐semiconductor junctions, the peak hole mobility of GaSb nanowire field‐effect‐transistor can be enhanced to the highest value of 3372 cm 2 V −1 s −1 in the atmosphere, showing three times than the un‐deposited one.