New computation methods for low-voltage effects in SEM and X-ray microanalysis. (August 2022)

• Record Type: Journal Article
• Authors: Teng, Chaoyi; Gauvin, Raynald; Wang, Yongzhe
• Is Part Of: Materials today communications. Volume 32(2022)
• Publication Date: 2022-08
• Subjects: SEM -- EDS -- Backscattering coefficient -- X-ray microanalysis -- Monte Carlo simulation; Materials science -- Periodicals; 620.11
• DOI: 10.1016/j.mtcomm.2022.103994
• Languages: English
• ISSNs: 2352-4928

Abstract

Abstract: Scanning electron microscopy (SEM) equipped with an energy dispersive spectroscopy (EDS) is one of the most popular microanalytical techniques for image characterization and X-ray microanalysis. A low-voltage SEM/EDS analysis offers numerous advantages; however, there are still many challenges in data acquisition and interpretation. New computation methods for low-voltage effects in SEM imaging and X-ray microanalysis are proposed in this study. New expressions for describing the beam energy effects on the probe size, backscattering coefficient, and backscattered electron ranges at low voltages are developed. The analytical sensitivity for X-ray microanalysis with radiations from K, L, and M–shells is thoroughly studied through the experiments and Monte Carlo simulations. Graphical Abstract: ga1 Highlights: New computation models for low-voltage effects in an SEM are proposed. Limited resolution for sufficient image contrast in an SEM is studied. New expression for backscattering coefficient at low voltages is developed. New expression for backscattered electron ranges is developed. X-ray microalaysis sensitivity are studied via experiments and simulations.