High‐Resistance Metal Oxide Window Layers for Optimal Front Contact Interfaces in Sb2Se3 Solar Cells. Issue 8 (17th May 2022)

• Record Type: Journal Article
• Authors: Mendes, Joao O.; Della Gaspera, Enrico; van Embden, Joel
• Is Part Of: Solar RRL. Volume 6:Issue 8(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-05-17
• Subjects: antimony selenides -- chalcogenides -- defects -- metal oxides -- vapor transport deposition; Solar energy -- Periodicals; Photovoltaic power generation -- Periodicals; Solar energy -- Research -- Periodicals; Photovoltaic power generation -- Research -- Periodicals; Periodicals; 333.7923
• DOI: 10.1002/solr.202200265
• Languages: English
• ISSNs: 2367-198X

Abstract

Abstract : Herein, an in‐depth experimental investigation into the effect of employing different high resistance metal oxide (HRMO) layers on the quality of the front contact in solar cells with an fluorine‐doped tin oxide (FTO)/(HRMO)/CdS/Sb2 Se3 /Au device architecture is presented. The application of ZnO or TiO2 HRMO layers between FTO substrates and CdS improves the overall device performance. Short‐circuit current gains of ≈20%, orders of magnitude higher shunt resistances (≈10 4 Ω cm 2 ), and greatly improved device stabilities—maintaining over 95% of their initial efficiency over 137 days are observed. A suppression of the unfavorable (120) orientation of the photoactive Sb2 Se3 layer is observed in devices with HRMO interlayers. The application of HRMO layers is crucial to prevent both ohmic and non‐ohmic current leaks and maintain device stability over time. Cross‐over in the current‐voltage ( JV ) curves observed in the case of TiO2 indicates the presence of a high barrier for the diode current in these devices. Wavelength‐dependent JV curves coupled with capacitance measurements and simulations show that this barrier can be attributed to a high density of interfacial acceptor states. In contrast, ZnO deposition is found to reduce interface defects and enhance the quality of the front contact, while boosting performance and increasing device longevity. Abstract : Thin‐film Sb2 Se3 solar cells are a promising emerging technology for inorganic photovoltaics. However, the poor interfaces at the front contact remain a key challenge. This study comprehensively investigates the effects of different high resistance metal oxide (HRMO) window layers within Sb2 Se3 solar cells and offers rational decisions on the most optimal window layer to employ in Sb2 Se3 devices.