Effect of argon-oxygen ratio on dielectric and energy storage properties of Ba(Zr0.35Ti0.65)O3 thin films. Issue 20 (15th October 2022)

• Record Type: Journal Article
• Authors: Li, Xiang; Sun, Zheng; Sun, Yanji; Yue, Xipeng; Han, Yemei; Xie, Yangyang; Hu, Kai; Wang, Fang; Zhang, Kailiang
• Is Part Of: Ceramics international. Volume 48:Issue 20(2022)
• Page Start: 29951
• Page End: 29958
• Publication Date: 2022-10-15
• Subjects: BZT35 -- Thin film -- Energy storage -- Argon to oxygen ratio; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2022.06.262
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: Lead-free Ba(Zr0.35 Ti0.65 )O3 (short as BZT35) ferroelectric thin films are prepared by RF magnetron sputtering on Pt/Ti/SiO2 /Si substrates. Effects of argon-to-oxygen (short as Ar/O2 ) ratios on phase transition, dielectric and energy storage properties are studied. The research found that all thin films are perovskite structures. With the decrease of Ar/O2, the oxygen vacancies (OVs) in the film are effectively suppressed, which promotes the film to obtain a larger dielectric constant, smaller dielectric loss, and lower leakage current density. The BZT35 film prepared under Ar/O2 = 40:10 has excellent energy storage density (48.03 J/cm 3 ) and efficiency (87.7%) because of its elongated hysteresis loop, the largest polarization difference (ΔP = 22.91 μC/cm 2 ), higher breakdown field strength (Eb = 4.50 MV/cm) and lower leakage current density (J = 2.3 × 10 −5 A/cm 2 ) and high power density of 7.94 MW/cm 3 . In addition, the BZT35 film also has excellent frequency stability (500 Hz-20 kHz). These excellent properties show that BZT35 has very broad application prospects in energy storage.