[Ir(ppy)2pyim]PF6 dielectric mixed with PMMA for area emission transistors. Issue 96 (3rd October 2016)

• Record Type: Journal Article
• Authors: Li, Jing; Li, Wenhai; Ma, Dongxin; Zhang, Weiqi; He, Lei; Duan, Lian; Wang, Liduo; Dong, Guifang
• Is Part Of: RSC advances. Volume 6:Issue 96(2016)
• Page Start: 94010
• Page End: 94013
• Publication Date: 2016-10-03
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c6ra22052e
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : An area emission transistor with [Ir(ppy)2 pyim]PF6 /PMMA as dielectric layer was demonstrated. The brightness is tuned by V DS and V GS, respectively. Abstract : We demonstrated an area emission transistor with [Ir(ppy)2 pyim]PF6 /PMMA as the dielectric layer. The brightness can be tuned by V DS and V GS, respectively. The device performance was optimized by adjusting the mass concentration ratios of PMMA. Different working mechanisms of the devices with and without PMMA were investigated through the Kelvin probe force microscope. The doping of PMMA will change the surface potential of [Ir(ppy)2 pyim]PF6, and then change the properties of charge injection. Our research may open up a new way for the development of multifunctional devices.