Effects of gallium and arsenic substitution on the electronic and magnetic properties of monolayer SnS. (31st May 2021)

• Record Type: Journal Article
• Authors: Ullah, Hamid; Iqbal, M Waqas; Ali, Asad; Noor, N A; Shin, Young-Han; Khan, Muhammad Junaid Iqbal; Saeedy, H I El
• Is Part Of: Physica scripta. Volume 96:Number 9(2021)
• Publication Date: 2021-05-31
• Subjects: monolayer SnS -- non-transition element -- electronic properties -- magnetic properties; Physics -- Periodicals; 530.05
• DOI: 10.1088/1402-4896/ac0375
• Languages: English
• ISSNs: 0031-8949

Abstract

Abstract: Monolayer tin sulphide (SnS) is an extraordinary two-dimensional material with semiconductor nature. We have explored the doping effects of Gallium (Ga) and Arsenic (As) atoms on the electronic and magnetic properties of monolayer SnS using first-principles calculations. We find that the doped system are energetically stable due to high binding energies. Both the dopants retain the semiconductor nature of monolayer SnS with a tuneable band gap. Interestingly, spin-polarization with magnetic moment of 1.00 μ B has been induced in both Ga- and As-doped monolayer SnS. Moreover, the realization of magnetic anisotropy energy (MAE) could pave a way to utilize Ga- and As-doped monolayer SnS for applications in magnetic semiconductor devices.