Effect of CuS buffer layer on the structural and optical properties of TeO2 nanowires: a comparative study. (1st September 2022)

• Record Type: Journal Article
• Authors: Alhazime, Ali A; Mohamed, S H; Khan, Mohd Taukeer; Awad, M A
• Is Part Of: Physica scripta. Volume 97:Number 9(2022)
• Publication Date: 2022-09-01
• Subjects: TeO2 -- CuS Buffer layer -- Nanowires -- optical properties -- Photoluminescence; Physics -- Periodicals; 530.05
• DOI: 10.1088/1402-4896/ac86ae
• Languages: English
• ISSNs: 0031-8949

Abstract

Abstract: The current work concerns with the effects of cupper sulfide (CuS) buffer layer on morphological, structural and optical properties of tellurium dioxide (TeO2 ) nanostructured thin films synthesized by vapor transport method. Single crystalline tetragonal TeO2 crystallographic phase with enhanced peak intensity and crystallinity for CuS/TeO2 film are observed by x-ray diffraction analysis. Scanning electron microscopy examinations revealed small rod-like morphology for TeO2 and randomly oriented nanowires morphology for CuS/TeO2 samples. The estimated optical band gap energies were 3.78 and 3.63 eV for TeO2 and CuS/TeO2 nanostructured films, respectively. The photoluminescence of CuS/TeO2 film was enhanced and red-shifted from 450 to 455 nm by the presence of CuS layer. The effective charge carrier life times were 0.14 ns and 1.92 ns for TeO2 and CuS/TeO2 films, respectively. These results could be beneficial for optoelectronic devices such as light emitting devices.