Crystal plasticity simulation of in-grain microstructural evolution during large deformation of IF-steel. (15th September 2022)

• Record Type: Journal Article
• Authors: Sedighiani, Karo; Traka, Konstantina; Roters, Franz; Sietsma, Jilt; Raabe, Dierk; Diehl, Martin
• Is Part Of: Acta materialia. Volume 237(2022)
• Publication Date: 2022-09-15
• Subjects: Crystal plasticity -- Microtexture -- Shear bands -- Dislocation density -- Polycrystalline materials -- DAMASK; Materials -- Periodicals; Materials science -- Periodicals; Materials -- Mechanical properties -- Periodicals; Metallurgy -- Periodicals; Chemistry, Inorganic -- Periodicals; 620.112
• DOI: 10.1016/j.actamat.2022.118167
• Languages: English
• ISSNs: 1359-6454

Abstract

Graphical abstract: Abstract: High-resolution three-dimensional crystal plasticity simulations are used to investigate deformation heterogeneity and microstructure evolution during cold rolling of interstitial free (IF-) steel. A Fast Fourier Transform (FFT)-based spectral solver is used to conduct crystal plasticity simulations using a dislocation-density-based crystal plasticity model. The in-grain texture evolution and misorientation spread are consistent with experimental results obtained using electron backscatter diffraction (EBSD) experiments. The crystal plasticity simulations show that two types of strain localization features develop during the large strain deformation of IF-steel. The first type forms band-like areas with large strain accumulation that appear as river patterns extending across the specimen. In addition to these river-like patterns, a second type of strain localization with rather sharp and highly localized in-grain shear bands is identified. These localized features are dependent on the crystallographic orientation of the grain and extend within a single grain. In addition to the strain localization, the evolution of in-grain orientation gradients, misorientation features, dislocation density, kernel average misorientation, and stress in major texture components are discussed.