Arsenic diffusion in boron‐doped germanium. Issue 2 (1st January 2013)

• Record Type: Journal Article
• Authors: Liu, T.; Orlowski, M. K.
• Is Part Of: Electronics letters. Volume 49:Issue 2(2013)
• Page Start: 154
• Page End: 156
• Publication Date: 2013-01-01
• Subjects: Ge:B, As; temperature; arsenic -- boron -- diffusion -- elemental semiconductors -- germanium -- hole density -- rapid thermal annealing -- secondary ion mass spectra -- semiconductor doping -- vacancies (crystal); arsenic diffusion dependence -- boron‐doped germanium -- As implantation -- Ge substrate -- high boron background doping -- hole density -- negatively charged vacancies -- dopant‐vacancy pairs -- secondary ion mass spectroscopy -- rapid thermal annealing -- chemical profiles -- As+V0 pairs -- diffusion vehicles -- activation energy -- temperature 600 degC to 750 degC -- Ge:B, As; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2012.3444
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Arsenic (As) diffusion in germanium (Ge) has been studied by implanting As in a Ge substrate with high boron (B) background doping. The high hole density induced by the B doping suppresses negatively charged vacancies (V) in Ge. Under this condition, we have investigated the dependence of As diffusion on the dopant‐vacancy pairs As + V 0 by secondary ion mass spectroscopy. After rapid thermal annealing at 600−750°C, the chemical profiles of As do not change in the highly B doped Ge. Experimental results suggest that the As + V 0 pairs are not the diffusion vehicles of As in Ge. Activation energy of the As + V 0 pairs has to be larger than 3.25 eV.