Efficient terahertz devices based on III–V semiconductor photoconductors. Issue 2 (1st April 2014)

• Record Type: Journal Article
• Authors: Kostakis, Ioannis; Saeedkia, Daryoosh; Missous, Mohamed
• Is Part Of: IET optoelectronics. Volume 8:Issue 2(2014)
• Page Start: 33
• Page End: 39
• Publication Date: 2014-04-01
• Subjects: dipole antennas -- electro‐optical devices -- gallium arsenide -- III‐V semiconductors -- indium compounds -- photoconducting devices -- photoconductivity -- photodetectors -- planar antennas -- terahertz wave detectors; GaAs -- InP -- wavelength 1.55 mum -- wavelength 1 mum -- wavelength 800 nm -- battery‐operated THz devices -- low‐voltage bias -- strong THz signal -- THz response -- THz emitter -- structure characterisation -- high‐quality measurement -- excitation wavelengths -- short dipole antennas -- large aperture antennas -- pulsed excitation -- time‐domain spectroscopy system -- terahertz detectors -- terahertz emitters -- InP‐based photoconductors -- GaAs‐based photoconductors -- low temperature -- dipole antenna structures -- planar aperture -- IIIâ€"V semiconductor photoconductors -- terahertz device; Optoelectronics -- Periodicals; 621.36
• DOI: 10.1049/iet-opt.2013.0057
• Languages: English
• ISSNs: 1751-8768

Abstract

Abstract : A series of planar aperture and dipole antenna structures fabricated on low temperature grown GaAs and InP‐based photoconductors have been evaluated as terahertz (THz) emitters and detectors in a time‐domain spectroscopy system under pulsed excitation. The combination of large aperture antennas as emitters and short dipole antennas as detectors results in efficient THz devices operating at 800 nm, 1 μm and 1.55 μm excitation wavelengths. The system responses of these materials are among the best ever reported and allow high‐quality measurements to be made. Finally, characterisation of a structure able to be biased vertically and its evaluation as THz emitter is reported for the first time. The THz response of this material with a strong THz signal at low‐voltage bias makes the development of battery‐operated THz devices possible.