Modelling hysteresis in vanadium dioxide oscillators. Issue 11 (1st May 2015)

• Record Type: Journal Article
• Authors: Maffezzoni, P.; Daniel, L.; Shukla, N.; Datta, S.; Raychowdhury, A.; Narayanan, V.
• Is Part Of: Electronics letters. Volume 51:Issue 11(2015)
• Page Start: 819
• Page End: 820
• Publication Date: 2015-05-01
• Subjects: relaxation oscillators -- hysteresis -- nanoelectronics -- vanadium compounds; oscillator hysteresis -- original circuit level model -- electron devices -- electronic hysteresis -- compact relaxation nanooscillator -- bio‐inspired neurocomputing -- VO2; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2015.0025
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : An original circuit‐level model of two‐terminal vanadium dioxide electron devices exhibiting electronic hysteresis is presented. Such devices allow realisation of very compact relaxation nano‐oscillators that potentially can be used in bio‐inspired neurocomputing. The proposed model is exploited to determine the parameters, values that ensure stable periodic oscillations.