Titanium oxide vertical resistive random‐access memory device. (1st July 2015)

• Record Type: Journal Article
• Authors: Fryauf, David M.; Norris, Kate J.; Zhang, Junce; Wang, Shih‐Yuan; Kobayashi, Nobuhiko P.
• Is Part Of: Micro & nano letters. Volume 10:Number 7(2015)
• Page Start: 321
• Page End: 323
• Publication Date: 2015-07-01
• Subjects: platinum -- titanium compounds -- semiconductor materials -- metal‐semiconductor‐metal structures -- resistive RAM -- photolithography -- electron beam deposition -- vacuum deposition -- atomic layer deposition -- electrical resistivity -- scanning electron microscopy -- transmission electron microscopy; vertical resistive random‐access memory switching devices -- vertical three‐dimensional structure -- photolithography -- electron‐beam evaporation -- electrodes -- atomic layer deposition -- dielectric layers -- active switching cross‐sectional area -- nanosized devices -- structural integrity -- electrical characteristics -- cross‐sectional scanning electron microscopy -- transmission electron microscopy -- current‐voltage characteristics -- Pt‐TiO2‐Pt; Nanotechnology -- Periodicals; Nanostructures -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1049/mnl.2015.0021
• Languages: English
• ISSNs: 1750-0443

Abstract

Abstract : Pt/TiO2 /Pt vertical resistive random‐access memory switching devices were fabricated in a vertical three‐dimensional structure by combining conventional photolithography, electron‐beam evaporation for electrodes and atomic layer deposition for dielectric layers. The active switching cross‐sectional area was ∼0.02 µm 2, which is comparable to nanosized devices that require more elaborative fabrication processes. Structural integrity and electrical characteristics of the vertical memory device were analysed by cross‐sectional scanning, transmission electron microscopy and current–voltage characteristics.