Gain, amplified spontaneous emission and noise figure of bulk InGaAs/InGaAsP/InP semiconductor optical amplifiers. Issue 2 (1st April 2015)

• Record Type: Journal Article
• Authors: Mazzucato, Simone; Carrère, Helene; Marie, Xavier; Amand, Thierry; Achouche, Mohand; Caillaud, Christophe; Brenot, Romain
• Is Part Of: IET optoelectronics. Volume 9:Issue 2(2015)
• Page Start: 52
• Page End: 60
• Publication Date: 2015-04-01
• Subjects: band structure -- carrier density -- gallium arsenide -- III‐V semiconductors -- indium compounds -- light polarisation -- optical noise -- semiconductor growth -- semiconductor optical amplifiers -- superradiance; InGaAs‐InGaAsP‐InP -- wavelength 100 nm -- transverse magnetic emission kept constant -- transverse electric emission kept constant -- barrier height function -- carrier density function -- temperature function -- k‐dependent bandgap shrinkage effect -- tetragonal strain -- Luttinger‐Kohn Hamiltonian -- material bandstructure -- polarisation insensitive amplification -- tensile strain -- bulk InGaAs‐InGaAsP‐InP semi‐conductor optical amplifiers -- noise figure -- amplified spontaneous emission; Optoelectronics -- Periodicals; 621.36
• DOI: 10.1049/iet-opt.2014.0064
• Languages: English
• ISSNs: 1751-8768

Abstract

Abstract : Bulk InGaAs layer under slight tensile strain, embedded in InGaAsP barriers and grown on InP, was used as semiconductor optical amplifier active layer for polarisation insensitive amplification. The material bandstructure was obtained by solving the Lüttinger–Kohn Hamiltonian, including tetragonal strain contribution. Study of the InGaAs material gain was performed by taking into account the effect of k‐dependent bandgap shrinkage. The semiconductor optical amplifiers device amplified spontaneous emission and noise figure have been investigated as a function of temperature, carrier density and barrier height. Good agreement was obtained with the trends observed in the experimental characteristics. The authors show that a 100 nm bandwidth can be obtained with a difference between transverse electric and transverse magnetic emission kept constant, as required for polarisation independent amplifiers.