AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer. (20th July 2014)

• Record Type: Journal Article
• Authors: Chang, P. C.; Lee, K. H.; Wang, Z. H.; Chang, S. J.
• Other Names: Ji Liang-Wen Academic Editor.
• Is Part Of: Journal of nanomaterials. Volume 2014(2014)
• Publication Date: 2014-07-20
• Subjects: Nanostructured materials -- Periodicals; Nanotechnology -- Periodicals; Nanomatériaux; Nanostructured materials; Nanotechnology; Nanostructures; Nanotechnology; Periodicals; Fulltext; Internet Resources; Periodicals; 620.115
• DOI: 10.1155/2014/623043
• Languages: English
• ISSNs: 1687-4110

Abstract

Abstract : We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-M g x N y /GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-M g x N y /GaN buffer.