Relative Humidity Dependent Resistance Switching of Bi2S3 Nanowires. (25th December 2017)

• Record Type: Journal Article
• Authors: Meija, Raimonds; Kunakova, Gunta; Prikulis, Juris; Varghese, Justin M.; Holmes, Justin D.; Erts, Donats
• Other Names: Armentano Ilaria Academic Editor.
• Is Part Of: Journal of nanomaterials. Volume 2017(2017)
• Publication Date: 2017-12-25
• Subjects: Nanostructured materials -- Periodicals; Nanotechnology -- Periodicals; Nanomatériaux; Nanostructured materials; Nanotechnology; Nanostructures; Nanotechnology; Periodicals; Fulltext; Internet Resources; Periodicals; 620.115
• DOI: 10.1155/2017/6823601
• Languages: English
• ISSNs: 1687-4110

Abstract

Abstract : Electrical properties of Bi2 S3 nanowires grown using a single source precursor in anodic aluminum oxide templates are sensitive to the relative humidity in an inert gas environment. Dynamic sensing dependency is obtained and shows presence of spontaneous resistance switching effect between low and high relative humidity states. Employing the thermionic field emission theory, heights of Schottky barriers are estimated from the current-voltage characteristics and in relation to the humidity response. The change of Schottky barrier height is explained by local changes in physically adsorbed water molecules on the surface of the nanowire.