Anisotropic Charge Transport Enabling High‐Throughput and High‐Aspect‐Ratio Wet Etching of Silicon Carbide (Small Methods 8/2022). Issue 8 (17th August 2022)

• Record Type: Journal Article
• Authors: Shi, Dachuang; Chen, Yun; Li, Zijian; Dong, Shankun; Li, Liyi; Hou, Maoxiang; Liu, Huilong; Zhao, Shenghe; Chen, Xin; Wong, Ching‐Ping; Zhao, Ni
• Is Part Of: Small methods. Volume 6:Issue 8(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-08-17
• Subjects: high aspect ratios -- micro/nano‐structures -- photo‐electrochemical etching -- silicon carbide -- wide‐bandgap semiconductors; Nanotechnology -- Methodology -- Periodicals; Nanotechnology -- Periodicals; Periodicals; 620.5028
• DOI: 10.1002/smtd.202270049
• Languages: English
• ISSNs: 2366-9608

Abstract

Abstract : Inside Back Cover In article number 2200329, Chen, Zhao, and co‐workers demonstrated an etching structure that exploits anisotropic charge carrier flow to enable high‐throughput, external‐bias‐free wet etching of SiC micro‐/nanostructures with record high etching speed and aspect ratio.