A Single‐Molecule Memristor based on an Electric‐Field‐Driven Dynamical Structure Reconfiguration. Issue 36 (8th August 2022)

• Record Type: Journal Article
• Authors: Guo, Yilin; Yang, Chen; Zhou, Shuyao; Liu, Zhirong; Guo, Xuefeng
• Is Part Of: Advanced materials. Volume 34:Issue 36(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-08-08
• Subjects: Fries rearrangement -- intra‐ and intermolecular pathway -- single‐molecule memristors -- structure reconfiguration; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.202204827
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: A robust single‐molecule memristor is prepared by covalently integrating one phenol molecule with multiple binding sites into nanogapped graphene electrodes. Multilevel resistance switching is realized by the electric‐field‐manipulated reconfiguration of the acyl moiety on the phenol center, that is, the Fries rearrangement. In situ measurements of the reaction trajectories with an initial single substrate and an intermediate break through the limitation of macroscopic experiments, therefore unveiling both intramolecular and intermolecular mechanistic pathways (a long‐term controversy) as well as comprehensive dynamic information. Based on this advance, high‐performance single‐molecule memristors in both the solution and solid states are achieved successively, providing a new understanding of memristive systems and neural network computing. Abstract : A single‐molecule memristor with long‐lasting retained memory states, high write–erase endurance, and adjustable on/off ratio is realized by a novel mechanism—dynamical structure reconfiguration in the Fries rearrangement. Precise manipulation of the potential energy surface of the reaction by external electric fields can retain and switch the corresponding desired species along the reaction coordinate to achieve a memory effect.