Cite
HARVARD Citation
Borga, M. et al. (2020). Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices. Applied physics express. p. . [Online].
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Borga, M. et al. (2020). Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices. Applied physics express. p. . [Online].