A Doped Hole Transport Layer Qualified for 100 °C‐Tolerant Perovskite Solar Cells. Issue 15 (2nd May 2022)

• Record Type: Journal Article
• Authors: Xie, Xinrui; He, Lifei; Cai, Yaohang; Zhang, Bing; Ren, Ming; Zhang, Yuyan; Li, Tianyu; Yuan, Yi; Zhang, Jing; Wang, Peng
• Is Part Of: Advanced optical materials. Volume 10:Issue 15(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-05-02
• Subjects: doping -- molecular semiconductors -- perovskite solar cells -- thermal stability -- translational motion; Optical materials -- Periodicals; Photonics -- Periodicals; 620.11295
• DOI: 10.1002/adom.202200515
• Languages: English
• ISSNs: 2195-1071

Abstract

Abstract: Due to the extremely low intrinsic carrier density and disordered nature of organic semiconductor thin films, unintentional or intentional chemical doping is inevitable for sufficiently high carrier density and charge mobility unless charges are either injected from appropriate electrodes or by photoexcitation. However, doping often results in a reduction in thermal tolerance. The charge transport layers for thermostable perovskite solar cells (PSCs) need to possess a heat‐resistant morphology and to suppress the diffusion of volatile species. Here the authors report a molecular semiconductor with a molecular mass of >2000 Daltons but free of any flexible side chains. Its air‐doped composite with thermally stable acid salt exhibits an electrical conductivity of over 50 μS cm −1 and a glass transition temperature of 142 °C. Molecular dynamics simulations reveal that molecules and ions in this composite do not experience significant translational motion even at 150 °C. These unusual features allow for the fabrication of 21.5%‐efficiency PSCs that can withstand 200 h at 100 °C. Abstract : A dibenzochrysene‐based molecular semiconductor with >2000 Daltons molecular mass and good solution‐processability is prepared in good yield by direct arylation. Its air‐doped composite owns an electrical conductivity of over 50 μS cm −1 and a glass transition temperature of 142 °C. The hole transport layer exhibits heat‐resistant morphology and controls the decomposition of perovskite, enabling the fabrication of 21.5%‐efficiency and 100 °C durable solar cells.