Cite
HARVARD Citation
Xia, Y. et al. (2022). 2D Heterostructure of Bi2O2Se/Bi2SeOx Nanosheet for Resistive Random Access Memory. Advanced Electronic Materials. p. n/a. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Xia, Y. et al. (2022). 2D Heterostructure of Bi2O2Se/Bi2SeOx Nanosheet for Resistive Random Access Memory. Advanced Electronic Materials. p. n/a. [Online].