Mechanical Switching of Ferroelectric Domains in 33‐200 nm‐Thick Sol‐Gel‐Grown PbZr0.2Ti0.8O3 Films Assisted by Nanocavities. (28th April 2022)

• Record Type: Journal Article
• Authors: Gonzalez Casal, Sergio; Bai, Xiaofei; Alhada‐Lahbabi, Kevin; Canut, Bruno; Vilquin, Bertrand; Rojo Romeo, Pedro; Brottet, Solène; Albertini, David; Deleruyelle, Damien; Bugnet, Matthieu; Canero Infante, Ingrid; Gautier, Brice
• Is Part Of: Advanced Electronic Materials. Volume 8:Number 9(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-04-28
• Subjects: ferroelectricity -- ferroelectric switching -- lead titanate zirconate -- piezoresponse force microscopy -- thin films; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.202200077
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: The mechanical switching of ferroelectric domains is achieved in PbZr0.2 Ti0.8 O3 thin films obtained by the sol‐gel method for thicknesses up to 200 nm. The dielectric polarization can be switched when a force higher than a given threshold value in the order of some μNewtons is applied with the tip of an atomic force microscope. This threshold is determined as a function of the thickness of the films, and local hysteresis loops are recorded under mechanical stress. The possibility of switching the polarization in such unusually thick films is related to the existence in their volume of physical nanoscale defects, which might play the role of pinning centers for the domains. Abstract : The mechanical switching of ferroelectric domains is achieved in PbZr0.2 Ti0.8 O3 thin films obtained by the sol‐gel method for thicknesses up to 200 nm. The possibility of switching the polarization in such unusually thick films is related to the existence in their volume of physical nanoscale cavities, which might play the role of pinning centers for the domains.