Cite
HARVARD Citation
Berger, C. et al. (2023). Electrical, morphological and structural properties of Ti ohmic contacts formed on n-type 4H–SiC by laser thermal annealing. Materials science in semiconductor processing. p. . [Online].
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Berger, C. et al. (2023). Electrical, morphological and structural properties of Ti ohmic contacts formed on n-type 4H–SiC by laser thermal annealing. Materials science in semiconductor processing. p. . [Online].