CFD‐DEM simulation of wall sheeting and particles charge in fluidized beds. (10th March 2021)

• Record Type: Journal Article
• Authors: Kazemi, Saman; Zarghami, Reza; Mostoufi, Navid; Sotudeh‐Gharebagh, Rahmat
• Is Part Of: Canadian journal of chemical engineering. Volume 99:Number 7(2021)
• Page Start: 1582
• Page End: 1594
• Publication Date: 2021-03-10
• Subjects: agglomeration -- CFD‐DEM -- electrostatic force -- fluidized bed -- wall sheeting; Chemical engineering -- Periodicals; Technology -- Periodicals; 660.05
• DOI: 10.1002/cjce.24007
• Languages: English
• ISSNs: 0008-4034

Abstract

Abstract: The effect of the electrostatic charge of particles was investigated in fluidized beds with conductive and nonconductive walls. For this purpose, changes in the wall surface charge density and particle contact time near the wall were examined. Computational fluid dynamics/discrete element method (CFD‐DEM) was utilized to simulate the accumulation of particle and wall‐induced electrostatic charges in a quasi‐two‐dimensional fluidized bed. Particles and walls were initially considered neutral and gained charge with time. The simulations showed that aggregated particles are formed due to the presence of the opposite electrostatic charges. Agglomerates are produced by joining the aggregated particles together. Agglomerates have a layered‐like structure and are made of positive and negative particles. Accumulation of these agglomerates and aggregated particles on the wall forms wall sheeting, which has a layered‐like structure. In other words, particles do not accumulate on the wall individually. A significant accumulation of particles near the wall was seen in the presence of electrostatic charges compared with the neutral bed. Also, the contact time of particles on the wall in the conductive case was more prolonged than in the nonconductive case. The results indicate that the CFD‐DEM approach is a helpful technique for predicting particles behaviour in the presence of the electrostatic charge. Abstract : Wall sheeting.