Photovoltaic Action in Graphene–Ga2O3 Heterojunction with Deep‐Ultraviolet Irradiation. Issue 8 (30th May 2018)

• Record Type: Journal Article
• Authors: Kalita, Golap; Mahyavanshi, Rakesh D.; Desai, Pradeep; Ranade, Ajinkya K.; Kondo, Masaharu; Dewa, Takehisa; Tanemura, Masaki
• Is Part Of: Physica status solidi. Volume 12:Issue 8(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-05-30
• Subjects: beta‐gallium oxide -- graphene -- photovoltaic action -- vertical Schottky diode; Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201800198
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : We demonstrate the fabrication of a monolayer graphene/β‐Ga2 O3 heterostructure and its interesting prospect of producing a suitable Schottky barrier potential for deep‐ultraviolet (DUV) responsive photovoltaic device. The transient response behavior shows a faster response time for photovoltaic mode operation of the photodiode. The fast response at a zero bias is due to generation of photocurrent under an internal built‐in field in the graphene/Ga2 O3 interface without any contribution from the trapped carriers. The fabricated device also shows an excellent photoresponsivity of 6.1 A W −1 with a slower response time at a low reverse bias voltage (−1.5 V). The high photoresponsivity at a bias voltage can be related to carrier multiplication due to carriers trapping/release process. Our findings show that the graphene/β‐Ga2 O3 heterostructure can be significant for self‐powered/low power consuming DUV detector applications. Abstract : Kalita et al. demonstrate the fabrication of a graphene/β‐Ga2 O3 heterostructure and its interesting prospect of producing a suitable Schottky barrier potential for deep‐ultraviolet responsive photovoltaic device. The authors reveal the bias dependent transient response behaviour for the fabricated graphene/β‐Ga2 O3 Schottky junction. The transient response behaviour shows a faster response time for photovoltaic mode operation of the photodiode.