5, 291‐ppi OLED display enabled by monolithic integration of C‐axis‐aligned crystalline IGZO FET and Si CMOS. Issue 9 (7th July 2022)

• Record Type: Journal Article
• Authors: Kato, Kiyoshi; Kobayashi, Hidetomo; Shishido, Hideaki; Isa, Toshiyuki; Aoyama, Tomoya; Jimbo, Yasuhiro; Hodo, Ryota; Kusunoki, Koji; Kunitake, Hitoshi; Yamazaki, Shunpei
• Is Part Of: Journal of the Society for Information Display. Volume 30:Issue 9(2022)
• Page Start: 690
• Page End: 698
• Publication Date: 2022-07-07
• Subjects: CAAC‐IGZO -- high‐resolution OLED display -- OS/Si monolithic stack -- oxide semiconductor FET -- Si CMOS; Information display systems -- Periodicals; 621.38154205
• DOI: 10.1002/jsid.1167
• Languages: English
• ISSNs: 1071-0922

Abstract

Abstract: For the first time in the world, we have fabricated an organic light‐emitting diode (OLED) display that monolithically integrates Si CMOS and oxide semiconductor FETs (OSFETs). OSFETs can be monolithically stacked on Si CMOS. With this OS/Si monolithic stack technology, we have fabricated driver circuits with Si CMOS and pixel circuits with OSFETs. This enables displays to have thin bezels. In addition, fabricating pixel circuits with OSFETs, which have higher breakdown voltage than Si CMOS, allows the use of tandem OLED devices that require high driving voltage. This enables an OLED display with a pixel density over 5, 000 ppi. Abstract : For the first time in the world, we have fabricated an organic light‐emitting diode (OLED) display that monolithically integrates Si CMOS, oxide semiconductor FETs (OSFETs), and OLED devices. The panel fabricated is a thin‐bezel, >5, 000 ppi OLED display with drivers embedded in the display area, enabling area savings of up to approximately 40%.