Cite
HARVARD Citation
Barry, O. et al. (2018). Reduction of Residual Impurities in Homoepitaxial m‐Plane (101¯0) GaN by Using N2 Carrier Gas in Metalorganic Vapor Phase Epitaxy (Phys. Status Solidi RRL 8/2018). Physica status solidi. 12 (8), p. n/a. [Online].