High Open‐Circuit Voltage in Full‐Inorganic Sb2S3 Solar Cell via Modified Zn‐Doped TiO2 Electron Transport Layer. Issue 12 (14th October 2020)

• Record Type: Journal Article
• Authors: Ishaq, Muhammad; Chen, Shuo; Farooq, Umar; Azam, Muhammad; Deng, Hui; Su, Zheng-Hua; Zheng, Zhuang-Hao; Fan, Ping; Song, Hai-Sheng; Liang, Guang-Xing
• Is Part Of: Solar RRL. Volume 4:Issue 12(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-10-14
• Subjects: electron transport layers -- open-circuit voltage -- Sb2S3 solar cells -- Zn-doped TiO2; Solar energy -- Periodicals; Photovoltaic power generation -- Periodicals; Solar energy -- Research -- Periodicals; Photovoltaic power generation -- Research -- Periodicals; Periodicals; 333.7923
• DOI: 10.1002/solr.202000551
• Languages: English
• ISSNs: 2367-198X

Abstract

Abstract : Antimony sulfide (Sb2 S3 ) is emerging as a popular photovoltaic candidate for thin‐film solar cells due to its large absorption coefficient, suitable bandgap, nontoxic, and earth‐abundant nature. The performance of thermally evaporated Sb2 S3 devices is severely restricted by interfacial recombination leading to high open‐circuit voltage ( V OC ) losses. CdS as electron transport layer (ETL) has overcome this problem, but triggered lower J SC issues due to parasitic absorption loss conceding to its smaller bandgap. Herein, a spray pyrolysis method is adopted for the deposition of a uniform and compact Zn‐doped TiO2 film with tuned energy levels to facilitate charge extraction and transport. The solar cell fabricated with a modified TiO2 ETL holds superior interface quality, high build‐in potential, and suppressed recombination losses, therefore pronouncedly improves the V OC . As a result, the efficiency of the device is boosted from 4.41% to 5.16%, a record V OC of 702 mV for Cd‐free full‐inorganic Sb2 S3 solar cell is achieved. These findings are expected to be implemented in other Sb‐chalcogenide solar cells to further enhance the device performance. Abstract : An efficient Zn‐doped TiO2 electron transport layer is introduced via spray pyrolysis method. Zn‐doping favorably alters the crystallinity and energy level of TiO2 and induces the growth of (hk1)‐oriented Sb2 S3 thin film. The fabricated full‐inorganic Cd‐free device (FTO/Zn‐TiO2 /Sb2 S3 /Au) results in a power conversion efficiency of 5.16% and a record open‐circuit voltage of 702 mV.