Highly conductive epitaxial β-Ga2O3 and β-(AlxGa1−x)2O3 films by MOCVD. (1st October 2022)

• Record Type: Journal Article
• Authors: Alema, Fikadu; Itoh, Takeki; Vogt, Samuel; Speck, James S.; Osinsky, Andrei
• Is Part Of: Japanese journal of applied physics. Volume 61:Number 10(2022)
• Publication Date: 2022-10-01
• Subjects: β-Ga2O3 -- (AlxGa1−x)2O3 -- heavy doping -- MOCVD -- conductivity -- mobility -- carrier concentration; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/ac8bbc
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: We report on the epitaxial growth of highly conductive degenerated Ge or Si doped β -Ga2 O3 and β -(Al x Ga1− x )2 O3 films by MOCVD. Highly conductive homoepitaxial β -Ga2 O3 layers with record conductivities of 2523 and 1581 S cm −1 were realized using Si and Ge dopants. Highly conductive Si doped β -(Al x Ga1− x )2 O3 films were also grown. The incorporation of Si decreased with the increase in Al content and layer thickness. Record high conductivity of 612 S cm −1 was attained for coherently strained β -(Al0.12 Ga0.88 )2 O3 .