A system-level method for hardening phase-locked loop to single-event effects. (1st September 2022)

• Record Type: Journal Article
• Authors: Liang, Bin; Xu, Xinyu; Yuan, Hengzhou; Chen, Jianjun; Luo, Deng; Chi, Yaqing; Sun, Hanhan
• Is Part Of: Materials research express. Volume 9:Number 9(2022)
• Publication Date: 2022-09-01
• Subjects: phase-looked loop -- charge pump -- radiation hardening by design -- single-event effects -- system-level hardening; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/ac8f87
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: To mitigate the sensitivity of the charge pump in a traditional Phase-Locked Loop(PLL), a single-event-hardened PLL architecture with a proportional and integral path is proposed. The phase margin of the PLL is kept at 58.16° due to the rational design and the output clock frequency ranges from 0.8 to 3.2 GHz. The circuit-level simulation results reveal that the sensitive volume of the hardened PLL decreases by 80% ∼ 95%. The novel radiation-hardened PLL circuit was implemented in a 28 nm CMOS technology and irradiated with heavy ions with a linear energy transfer between 1.9 and 65.6 MeVcm 2 mg −1 . The proposed radiation-hardened PLL shows one order of single-event effects hardness level higher than the conventional PLL.