Investigation on dislocation and deflection morphology of PVT-grown on-axis 4H-SiC crystals. (10th November 2022)

• Record Type: Journal Article
• Authors: Li, Huadong; Peng, Yan; Yang, Xianglong; Xie, Xuejian; Chen, Xiufang; Hu, Xiaobo; Xu, Xiangang
• Is Part Of: Journal of physics. Volume 55:Number 45(2022)
• Publication Date: 2022-11-10
• Subjects: 4H-SiC -- dislocation morphologies -- PVT; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/ac8f57
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: The morphologies of dislocation etch pits and dislocation deflections of on-axis 4H-SiC substrate etched by molten KOH were observed with the help of a microscope. Based on experimental observation and etch mechanism, a method for the identification of threading edge dislocations, threading screw dislocations (TSDs) and threading mixed dislocations was proposed. The details about the inner micro-structure of threading edge dislocations and TSDs were observed by laser scanning confocal microscope and scanning electron microscopy. The morphologies and the cross-sectional views of the basal plane dislocation formed by threading edge dislocation were observed and two models were formed to explain it.