Fourfold Polarization‐Sensitive Photodetector Based on GaTe/MoS2 van der Waals Heterojunction. (24th September 2021)

• Record Type: Journal Article
• Authors: Tan, Jin; Nan, Haiyan; Fu, Quangui; Zhang, Xiumei; Liu, Xing; Ni, Zhenhua; Ostrikov, Kostya (Ken); Xiao, Shaoqing; Gu, Xiaofeng
• Is Part Of: Advanced Electronic Materials. Volume 8:Number 1(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-09-24
• Subjects: GaTe/MoS 2 heterostructure -- polarization‐sensitive photodetector -- self‐driven; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.202100673
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: Integrated polarization‐sensitive photodetectors fabricated by geometric anisotropic 2D materials have become attractive in recent years. In this work, the successful construction of self‐driven and polarization‐sensitive photodetectors based on GaTe/MoS2 p–n van der Waals (vdW) heterojunction is demonstrated by mechanical exfoliation and dry transfer methods. The fabricated GaTe/MoS2 vdW heterojunctions show ambipolar behavior, and the highest rectification ratio can reach 93.4. The highest responsivity under 532 nm illumination reaches 145 mA W −1 and the response time is less than 10 ms. Moreover, the photocurrent polarization of the fabricated GaTe/MoS2 photodetectors manifests in fourfold anisotropy with a high polarization ratio of 2.9, which can be ascribed to the highly anisotropic monoclinic structure of layered m‐GaTe. This finding thus offers more information and creates new opportunities about how to fabricate integrated polarization‐sensitive photodetectors. Abstract : This paper demonstrated a self‐driven and polarization‐sensitive photodetector based on GaTe/MoS2 van der Waals heterojunction, which manifests in fourfold anisotropy with a high polarization ratio of 2.9. The highest rectification ratio can reach 93.4, and the highest responsivity under 532 nm illumination reaches 145 mA W −1 and the response time is less than 10 ms.