Sputter‐grown GeTe/Sb2Te3 superlattice interfacial phase change memory for low power and multi‐level‐cell operation. Issue 1 (12th October 2021)

• Record Type: Journal Article
• Authors: Jin, Soo‐Min; Kang, Shin‐Young; Kim, Hea‐Jee; Lee, Ju‐Young; Nam, In‐Ho; Shim, Tae‐Hun; Song, Yun‐Heub; Park, Jea‐Gun
• Is Part Of: Electronics letters. Volume 58:Issue 1(2022)
• Page Start: 38
• Page End: 40
• Publication Date: 2021-10-12
• Subjects: Sputter deposition -- Memory circuits -- Semiconductor storage; Electronics -- Periodicals; 621.381
• DOI: 10.1049/ell2.12337
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract: The multi‐level feature of GeTe/Sb2 Te3 interfacial phase change memory was achieved by applying a designed voltage‐based pulse. It stably demonstrated five multi‐level states without interference for 90 cycles by varying the pulse width. GeTe/Sb2 Te3 interfacial phase change memory demonstrated retention time of > 1.0 × 10 3 s, presenting the significantly low drift coefficient ( ν ) of < 0.009, indicating no resistivity drift due to the structure relaxation of glass. In addition, the reset energy consumption of GeTe/Sb2 Te3 interfacial phase change memory was reduced by more than 85% compared to conventional Ge2 Sb2 Te5 phase change memory at each bottom electrode contact size. Multi‐level‐cell operation mechanism and gradual increase in conductance value of GeTe/Sb2 Te3 interfacial phase change memory was explained by a partial resistance transition model where phase transition occurred partially in all layers. The result of the GeTe/Sb2 Te3 interfacial phase change memory performance is expected to bring great advantages to the next‐generation storage class memory industry that requires low energy and high density.