Cite
HARVARD Citation
Xu, R. et al. (2022). High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing. Small. 18 (37), p. n/a. [Online].
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Xu, R. et al. (2022). High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing. Small. 18 (37), p. n/a. [Online].