Negative Differential Resistance Behavior in n‐Channel Organic Thin‐Film Transistors Based on C60 and PTCDI‐C8: Electrical Characterization and Parameter Extraction. Issue 6 (21st January 2022)

• Record Type: Journal Article
• Authors: Wageh, S.; Boukhili, Walid; Al-Ghamdi, Ahmed
• Is Part Of: Physica status solidi. Volume 219:Issue 6(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-01-21
• Subjects: contact resistances -- n-channel organic thin-film transistors -- negative differential resistance behaviors -- parameter extractions -- transition voltage method -- trapping and detrapping; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.202100500
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Organic thin‐film transistors (OTFTs), based on two n‐type structures of fullerene (C60 ) and N, N ′‐dioctyl‐3, 4, 9, 10‐perylenedicarboximide (PTCDI‐C8), are investigated. The two OTFT devices reveal a negative differential resistance (NDR) behavior in the saturation region of the output curves. The OTFT based on C60 shows a more pronounced NDR than that based on PTCDI‐C8. The main origin of the NDR is ascribed to the trapping states. In addition, the contact resistance ( R c ) of the two devices, extracted using the developed voltage transition method ( V tr method), as well as the obtained values of R c, are in fair agreement with the experimental values extracted using the total resistance. The device based on C60 exhibits a higher R c than that based on PTCDI‐C8. OTFT parameters, such as transconductance ( g m ), mobility ( μ max ), threshold voltage ( V th, ), turn‐on voltage ( V on ), ratio current I on / I off, and subthreshold slope (SS), are obtained in the linear and saturation regimes. The extracted value of SS for the OTFT based on C60 is very small compared with that of the device based on PTCDI‐C8, which indicates an increase in the density of trapping states in the C60 film. Abstract : Organic thin‐film transistors (OTFTs) based on two n‐type structures of fullerene (C60 ) and N, N ′‐dioctyl‐3, 4, 9, 10‐perylenedicarboximide (PTCDI‐C8) revealed negative differential resistance (NDR) attitude in the saturation region of the output curves. Contact resistance ( R c ) was extracted by a developed voltage transition method. OTFT based on C60 showed a higher R c and NDR compared to that based on PTCDI‐C8.