Cite
HARVARD Citation
Köhler, K. et al. (2022). Leakage mechanism in AlxGa1−xN/GaN heterostructures with AlN interlayer. Semiconductor science and technology. p. . [Online].
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Köhler, K. et al. (2022). Leakage mechanism in AlxGa1−xN/GaN heterostructures with AlN interlayer. Semiconductor science and technology. p. . [Online].