Large and anisotropic carrier mobility in monolayers of the MA2Z4 series (M = Cr, Mo, W; A = Si, Ge; and Z = N, P). Issue 33 (4th August 2022)

• Record Type: Journal Article
• Authors: Priydarshi, Achintya; Chauhan, Yogesh Singh; Bhowmick, Somnath; Agarwal, Amit
• Is Part Of: Nanoscale. Volume 14:Issue 33(2022)
• Page Start: 11988
• Page End: 11997
• Publication Date: 2022-08-04
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/d2nr02382b
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : The recent discovery of synthetic two-dimensional materials has opened up a new paradigm for exploring novel transport and optical properties, beyond those found in naturally occurring materials. Abstract : The recent discovery of synthetic two-dimensional materials has opened up a new paradigm for exploring novel transport and optical properties, beyond those found in naturally occurring materials. Here, we present a detailed investigation of the acoustic phonon limited intrinsic carrier mobility in MA2 Z4 series (M = Cr, Mo, W; A = Si, Ge; and Z = N, P) monolayers. We find that out of the twelve monolayers studied, only two are metallic (CrGe2 N4 and CrGe2 P4 ), and the rest of them are semiconducting. We demonstrate that the carrier mobilities in these monolayers are anisotropic and show a large variation, ranging from a small value of ∼90 cm 2 V −1 s −1 to a large value of ∼10 4 cm 2 V −1 s −1 . In addition, we show that strain engineering in these materials can further change the electronic band structure drastically, and change the carrier mobilities by up to a factor of 20. Our detailed and systematic study provides a useful platform for designing electronic devices based on the MA2 Z4 family of materials.