Top‐Down Fabricated Silicon‐Nanowire‐Based Field‐Effect Transistor Device on a (111) Silicon Wafer. Issue 4 (12th November 2012)

• Record Type: Journal Article
• Authors: Yu, Xiao; Wang, Yuchen; Zhou, Hong; Liu, Yanxiang; Wang, Yi; Li, Tie; Wang, Yuelin
• Is Part Of: Small. Volume 9:Issue 4(2013:Feb.)
• Page Start: 525
• Page End: 530
• Publication Date: 2012-11-12
• Subjects: field‐effect transistors -- nanowires -- silicon -- top‐down process -- wafers; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201201599
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract : The unique anisotropic wet‐etching mechanism of a (111) silicon wafer facilitates the highly controllable top‐down fabrication of silicon nanowires (SiNWs) with conventional microfabrication technology. The fabrication process is compatible with the surface manufacturing technique, which is employed to build a nanowire‐based field‐effect transistor structure on the fabricated SiNW.