Fabrication of cadmium sulfide/p type silicon heterojunction solar cells under 300 °C with more than 10% efficiency. (October 2018)

• Record Type: Journal Article
• Authors: Gao, Bing; Zhao, Yingwen; Cai, Lun; Liu, Peilin; Liang, Zongcun; Shen, Hui
• Is Part Of: Solar energy. Volume 173(2018)
• Page Start: 635
• Page End: 639
• Publication Date: 2018-10
• Subjects: CdS/p-Si heterojunction solar cells -- Low temperature process -- Long-term stability; Solar energy -- Periodicals; Solar engines -- Periodicals; 621.47
• DOI: 10.1016/j.solener.2018.06.016
• Languages: English
• ISSNs: 0038-092X

Abstract

Highlights: At present, there are lack of researches on high efficiency silicon based heterojunction solar cells without amorphous silicon as the emitter. In this work, cadmium sulfide is applied as the emitter in silicon based heterojunction solar cells. The influence of the thickness and evaporation rate of cadmium sulfide, the optical and electrical properties of aluminum and hydrogen co-doped zinc oxide film (AZO:H), and the insert of molybdenum trioxide (MoO3 ) layer to the performance of CdS/p-Si heterojunction solar cells is analyzed. The efficiency of CdS/p-Si heterojunction solar cells with area of 1 × 1 cm 2 reaches 10.64%, with open voltage of 543 mV, short current density of 28.75 mA/cm 2, and fill factor of 68.13% under 300 ℃ . The cells with efficiency of 7.94% are certified by National Quality Supervision and Testing Center for Solar Photovoltaic Products (Guangdong, China). Abstract: Cadmium sulfide (CdS) film is combined to p-type silicon substrate in order to fabricate heterojunction solar cells. The optimized efficiency with inserting MoO3 layer between cadmium sulfide and silicon reaches 10.64%, with open voltage, short current density and fill factor of 543 mV, 28.75 mA/cm 2 and 68.13% under traditional condition of 300 °C. Finally, the cell's degradation rate is 5.30% in two months, indicating that this is a stable cell design.