Low-temperature sintering of Ti1−xCux/3Nb2x/3O2 (x = 0.23) microwave dielectric ceramics with CuO and B2O3 addition. Issue 3 (15th February 2018)

• Record Type: Journal Article
• Authors: Shao, Hui; Liu, Zhifu; Jian, Gang; Li, Yongxiang
• Is Part Of: Ceramics international. Volume 44:Issue 3(2018)
• Page Start: 3314
• Page End: 3318
• Publication Date: 2018-02-15
• Subjects: Dielectric properties -- Densification -- Ti1−xCux/3Nb2x/3O2 -- CuO-B2O3; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2017.11.108
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: The influence of CuO and B2 O3 addition on the sintering behavior, microstructure and microwave dielectric properties of Ti1−x Cux/3 Nb2x/3 O2 (TCN, x = 0.23) ceramic have been investigated. It was found that the addition of CuO and B2 O3 successfully reduced the sintering temperature of TCN ceramics from 950 to 875 °C. X-ray diffraction studies showed that addition of CuO-B2 O3 has no effect on the phase composition. The TCN ceramics with 0.5 wt% CuO-B2 O3 addition showed a high dielectric constant of 95.63, τ f value of + 329 ppm/°C and a good Q × f value of 8700 GHz after sintered at 875 °C for 5 h, cofirable with silver electrode.