Direct growth of hBN/Graphene heterostructure via surface deposition and segregation for independent thickness regulation. (19th November 2022)

• Record Type: Journal Article
• Authors: Liu, Wenyu; Li, Xiuting; Wang, Yushu; Xu, Rui; Ying, Hao; Wang, Le; Cheng, Zhihai; Hao, Yufeng; Chen, Shanshan
• Is Part Of: Nanotechnology. Volume 33:Number 47(2022)
• Publication Date: 2022-11-19
• Subjects: hBN/graphene -- heterostructure -- segregation -- surface deposition -- chemical vapor deposition; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/ac8994
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Hexagonal boron nitride/graphene (hBN/G) vertical heterostructures have attracted extensive attention, owing to the unusual physical properties for basic research and electronic device applications. Here we report a facile deposition-segregation technique to synthesize hBN/G heterostructures on recyclable platinum (Pt) foil via low pressure chemical vapor deposition. The growth mechanism of the vertical hBN/G is demonstrated to be the surface deposition of hBN on top of the graphene segregated from the Pt foil with pre-dissolved carbon. The thickness of hBN and graphene can be controlled separately from sub-monolayer to multilayer through the fine control of the growth parameters. Further investigations by Raman, scanning Kelvin probe microscopy and transmission electron microscope show that the hBN/G inclines to form a heterostructure with strong interlayer coupling and with interlayer twist angle smaller than 1.5°. This deposition-segregation approach paves a new pathway for large-scale production of hBN/G heterostructures and could be applied to synthesize of other van der Waals heterostructures.