Simulation Study of Hetero-Junction Single Gate Extended Source TFET. Issue 1 (1st August 2022)

• Record Type: Journal Article
• Authors: Singh, Suryavansh; Roy, Saurav Guha; Kumari, Anjali; Chander, Sweta; Sinha, Sanjeet Kumar; Chaudhary, Rekha
• Is Part Of: Journal of physics. Volume 2325:Issue 1(2022)
• Publication Date: 2022-08-01
• Subjects: Doping Concentration -- Source -- Hetero-Junction -- TFET -- Band-to-band-Tunneling; Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/2325/1/012020
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: The paper provides the information regarding the examination of Uni-Gate-Extended Source TFET w.r.t the doping concentration of source, drain and channel and device's dimensions. The moto of extending the source into channel is to enhance the point to point tunneling. 2D simulations in TCAD tool are carried out to analyse and investigate the performance of proposed device. Because of the transposed SS down the thermionic limit of 60 mV/decade, TFETs can be considered as the most trustworthy devices that have lower power consumption and that's why they are among the deserving devices for upcoming future CMOS logic applications. Although the TFET marks have been examined in fewer material systems, they are burdened by low ON-currents. We discussed the impact of sound on Tunnel FET devices and circuits. The dialogue is designed for the sound of a random noise effects. The paper also deals with configuration of gm and gd and their obtained significant values are rise up in the graph till 1x10-4 V-1 and 2x10-4V-1.