High Voltage Normally-Off p-GaN Gate HEMT with the Compatible High Threshold and Drain Current. (1st August 2022)

• Record Type: Journal Article
• Authors: Yu, Cheng; Wang, Fangzhou; He, Junxian; Zhang, Yujian; Sun, Ruize; Xu, Wenjun; Ding, Guojian; Feng, Qi; Wang, Xiaohui; Wang, Yang; He, Miao; Chen, Wanjun; Jia, Haiqiang; Chen, Hong
• Is Part Of: ECS journal of solid state science and technology. Volume 11:Number 8(2022)
• Publication Date: 2022-08-01
• Subjects: Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2162-8777/ac8a71
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : In this paper, we demonstrate a high voltage normally-off p-GaN gate high-electron-mobility-transistor (HEMT) to realize the compatible high threshold voltage ( V TH ) and high drain current ( I D ) performance. With the optimization of the epitaxial structure, the presented device shows a significantly improved V TH . Meanwhile, by using the high-quality ALD-Al2 O3 passivation layer, the high I D is also realized in the device because of the access region resistance reduction. Supported by the device fabrication, the p-GaN gate HEMT delivers a V TH = 3.2 V measured by linear extrapolation, a relatively large saturation I D ( I D_SAT ) of 246 mA mm −1, and a high breakdown voltage ( BV ) of 1830 V at 1 mA mm −1 . Among various p-GaN gate HEMTs with the I D_SAT over 200 mA mm −1, the fabricated p-GaN gate HEMT has a competitive V TH . The results suggest that the proposed device could be a promising candidate in high V TH and I D power electronics.