All‐Optically Controlled Memristor for Optoelectronic Neuromorphic Computing. (20th November 2020)
- Record Type:
- Journal Article
- Title:
- All‐Optically Controlled Memristor for Optoelectronic Neuromorphic Computing. (20th November 2020)
- Main Title:
- All‐Optically Controlled Memristor for Optoelectronic Neuromorphic Computing
- Authors:
- Hu, Lingxiang
Yang, Jing
Wang, Jingrui
Cheng, Peihong
Chua, Leon O.
Zhuge, Fei - Abstract:
- Abstract: Neuromorphic computing (NC) is a new generation of artificial intelligence. Memristors are promising candidates for NC owing to the feasibility of their ultrahigh‐density 3D integration and their ultralow energy consumption. Compared to traditional electrical memristors, the emerging optoelectronic memristors are more attractive owing to their ability to combine the advantages of both photonics and electronics. However, the inability to reversibly tune the memconductance with light has severely restricted the development of optoelectronic NC. Here, an all‐optically controlled (AOC) analog memristor is realized, with memconductance that is reversibly tunable over a continuous range by varying only the wavelength of the controlling light. The device is based on the relatively mature semiconductor material InGaZnO and a memconductance tuning mechanism of light‐induced electron trapping and detrapping. It is found that the light‐induced multiple memconductance states are nonvolatile. Furthermore, spike‐timing‐dependent plasticity learning can be mimicked in this AOC memristor, indicating its potential applications in AOC spiking neural networks for highly efficient optoelectronic NC. Abstract : An all‐optically controlled (AOC) analog memristor is realized based on the relatively mature material InGaZnO. The memconductance is reversibly tunable over a continuous range by varying only the wavelength of the controlling light. This device has promising applications in AOCAbstract: Neuromorphic computing (NC) is a new generation of artificial intelligence. Memristors are promising candidates for NC owing to the feasibility of their ultrahigh‐density 3D integration and their ultralow energy consumption. Compared to traditional electrical memristors, the emerging optoelectronic memristors are more attractive owing to their ability to combine the advantages of both photonics and electronics. However, the inability to reversibly tune the memconductance with light has severely restricted the development of optoelectronic NC. Here, an all‐optically controlled (AOC) analog memristor is realized, with memconductance that is reversibly tunable over a continuous range by varying only the wavelength of the controlling light. The device is based on the relatively mature semiconductor material InGaZnO and a memconductance tuning mechanism of light‐induced electron trapping and detrapping. It is found that the light‐induced multiple memconductance states are nonvolatile. Furthermore, spike‐timing‐dependent plasticity learning can be mimicked in this AOC memristor, indicating its potential applications in AOC spiking neural networks for highly efficient optoelectronic NC. Abstract : An all‐optically controlled (AOC) analog memristor is realized based on the relatively mature material InGaZnO. The memconductance is reversibly tunable over a continuous range by varying only the wavelength of the controlling light. This device has promising applications in AOC spiking neural networks for highly efficient optoelectronic neuromorphic computing. … (more)
- Is Part Of:
- Advanced functional materials. Volume 31:Number 4(2021)
- Journal:
- Advanced functional materials
- Issue:
- Volume 31:Number 4(2021)
- Issue Display:
- Volume 31, Issue 4 (2021)
- Year:
- 2021
- Volume:
- 31
- Issue:
- 4
- Issue Sort Value:
- 2021-0031-0004-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2020-11-20
- Subjects:
- all‐optically controlling -- memristive synapses -- neuromorphic computing -- optoelectronic memristors
Materials -- Periodicals
Chemical vapor deposition -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1616-3028 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/adfm.202005582 ↗
- Languages:
- English
- ISSNs:
- 1616-301X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.853900
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 23112.xml