Cite
HARVARD Citation
Lechaux, Y. et al. (2021). Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using deep-level transient Fourier spectroscopy. Semiconductor science and technology. p. . [Online].
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Lechaux, Y. et al. (2021). Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using deep-level transient Fourier spectroscopy. Semiconductor science and technology. p. . [Online].