Cite
HARVARD Citation
Arpapay, B. et al. (2021). A comparative study on GaSb epilayers grown on nominal and vicinal Si(100) substrates by molecular beam epitaxy. Semiconductor science and technology. p. . [Online].
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Arpapay, B. et al. (2021). A comparative study on GaSb epilayers grown on nominal and vicinal Si(100) substrates by molecular beam epitaxy. Semiconductor science and technology. p. . [Online].