Fabrication and characterisation of high sensitivity copper‐copper oxide‐copper (Cu‐CuO‐Cu) metal‐insulator‐metal tunnel junctions. Issue 5 (1st February 2013)

• Record Type: Journal Article
• Authors: Abdel‐Rahman, M.; Syaryadhi, M.; Debbar, N.
• Is Part Of: Electronics letters. Volume 49:Issue 5(2013)
• Page Start: 363
• Page End: 364
• Publication Date: 2013-02-01
• Subjects: Cu‐CuO‐Cu; size; electron beam lithography -- MIM structures -- sputter deposition; high sensitivity copper‐copper oxide‐copper -- metal‐insulator‐metal tunnel junctions -- symmetrical metal‐insulator‐metal diodes -- electron beam lithography -- sputter deposition -- size 2 mum -- Cu‐CuO‐Cu; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2012.4222
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A report is presented on the realisation and characterisation of symmetrical metal‐insulator‐metal (MIM) diodes using the new material combination: copper‐copper oxide‐copper (Cu‐CuO‐Cu). The MIM diodes, having contact areas of 2 × 2 µm 2, were fabricated using electron beam lithography and sputter deposition. The MIM diodes exhibited an absolute sensitivity as high as 4.497 V − 1 .