Enhanced thermoelectric performance in polymorphic heavily Co-doped Cu2SnS3 through carrier compensation by Sb substitution. Issue 1 (31st December 2021)
- Record Type:
- Journal Article
- Title:
- Enhanced thermoelectric performance in polymorphic heavily Co-doped Cu2SnS3 through carrier compensation by Sb substitution. Issue 1 (31st December 2021)
- Main Title:
- Enhanced thermoelectric performance in polymorphic heavily Co-doped Cu2SnS3 through carrier compensation by Sb substitution
- Authors:
- Zhao, Yaqing
Gu, Yan
Zhang, Peng
Hu, Xiaohui
Wang, Yifeng
Zong, Peng'An
Pan, Lin
Lyu, Yinong
Koumoto, Kunihito - Abstract:
- ABSTRACT: Heavily acceptor-doped Cu2 SnS3 (CTS) shows promisingly large power factor ( PF ) due to its rather high electrical conductivity ( σ ) which causes a modest ZT with a high electronic thermal conductivity ( κe ). In the present work, a strategy of carrier compensation through Sb-doping at the Sn site in Cu2 Sn0.8 Co0.2 S3 was investigated, aiming at tailoring electrical and phonon transport properties simultaneously. Rietveld analysis suggested a complex polymorphic microstructure in which the cation-(semi)ordered tetragonal phase becomes dominant over the coherently bonded cation-disordered cubic phase, as is preliminarily revealed using TEM observation, upon Sb-doping and Sb would substitute Sn preferentially in the tetragonal structure. With increasing content of Sb, the σ was lowered and the Seebeck coefficient ( S ) was enhanced effectively, which gave rise to high PF s maintained at ~10.4 μWcm −1 K −2 at 773 K together with an optimal reduction in κe by 60–70% in the whole temperature range. The lattice thermal conductivity was effectively suppressed from 1.75 Wm −1 K −1 to ~1.2 Wm −1 K −1 at 323 K while maintained very low at 0.3–0.4 Wm −1 K −1 at 773 K. As a result, a peak ZT of ~0.88 at 773 K has been achieved for Cu2 Sn0.74 Sb0.06 Co0.2 S3, which stands among the tops so far of the CTS-based diamond-like ternary sulfides. These findings demonstrate that polymorphic microstructures with cation-disordered interfaces as an approach to achieve effectiveABSTRACT: Heavily acceptor-doped Cu2 SnS3 (CTS) shows promisingly large power factor ( PF ) due to its rather high electrical conductivity ( σ ) which causes a modest ZT with a high electronic thermal conductivity ( κe ). In the present work, a strategy of carrier compensation through Sb-doping at the Sn site in Cu2 Sn0.8 Co0.2 S3 was investigated, aiming at tailoring electrical and phonon transport properties simultaneously. Rietveld analysis suggested a complex polymorphic microstructure in which the cation-(semi)ordered tetragonal phase becomes dominant over the coherently bonded cation-disordered cubic phase, as is preliminarily revealed using TEM observation, upon Sb-doping and Sb would substitute Sn preferentially in the tetragonal structure. With increasing content of Sb, the σ was lowered and the Seebeck coefficient ( S ) was enhanced effectively, which gave rise to high PF s maintained at ~10.4 μWcm −1 K −2 at 773 K together with an optimal reduction in κe by 60–70% in the whole temperature range. The lattice thermal conductivity was effectively suppressed from 1.75 Wm −1 K −1 to ~1.2 Wm −1 K −1 at 323 K while maintained very low at 0.3–0.4 Wm −1 K −1 at 773 K. As a result, a peak ZT of ~0.88 at 773 K has been achieved for Cu2 Sn0.74 Sb0.06 Co0.2 S3, which stands among the tops so far of the CTS-based diamond-like ternary sulfides. These findings demonstrate that polymorphic microstructures with cation-disordered interfaces as an approach to achieve effective phonon-blocking and low lattice thermal conductivity, of which further crystal chemistry, microstructural and electrical tailoring are possible by appropriate doping. Graphical Abstract: uf0001 … (more)
- Is Part Of:
- Science and technology of advanced materials. Volume 22:Issue 1(2021)
- Journal:
- Science and technology of advanced materials
- Issue:
- Volume 22:Issue 1(2021)
- Issue Display:
- Volume 22, Issue 1 (2021)
- Year:
- 2021
- Volume:
- 22
- Issue:
- 1
- Issue Sort Value:
- 2021-0022-0001-0000
- Page Start:
- 363
- Page End:
- 372
- Publication Date:
- 2021-12-31
- Subjects:
- Co-doped Cu2SnS3 -- sb-substitution -- carrier compensation -- polymorphic -- thermoelectric
50 Energy Materials -- 210 Thermoelectronics/Thermal transport/insulators
Materials -- Technological innovations -- Periodicals
620.112 - Journal URLs:
- http://iopscience.iop.org/1468-6996 ↗
https://tandfonline.com/toc/tsta20/current ↗
http://ioppublishing.org/ ↗ - DOI:
- 10.1080/14686996.2021.1920821 ↗
- Languages:
- English
- ISSNs:
- 1468-6996
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8134.254650
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 23014.xml