P-type doping in internally photoemitted hot carrier solar cells. (1st January 2021)

• Record Type: Journal Article
• Authors: Liao, Li Ping; Yao, Yan Qing; Wang, Gang; Xu, Cun Yun; Liu, De Bei; Zhou, Guang Dong; Zhong, Yuan Xin; Song, Qun Liang
• Is Part Of: Journal of cleaner production. Volume 278(2021)
• Publication Date: 2021-01-01
• Subjects: P-Type doping -- Hot carrier -- Perovskite; Factory and trade waste -- Management -- Periodicals; Manufactures -- Environmental aspects -- Periodicals; Déchets industriels -- Gestion -- Périodiques; Usines -- Aspect de l'environnement -- Périodiques; 628.5
• DOI: 10.1016/j.jclepro.2020.124168
• Languages: English
• ISSNs: 0959-6526

Abstract

Abstract: Hot carriers in hybrid perovskite have been proven to have eminent properties with long carrier cooling time and long carrier migration distance. The invention of the internally photoemitted hot carrier (IPHC) solar cell recently makes it possible to utilize the hot electrons in CH3 NH3 PbI3 perovskite and capture their excess energies under steady state illumination. How to further improve the efficiency of IPHC cells is challenging and crucial to demonstrate their effectiveness. In this work, sodium iodide (NaI) is added into the CH3 NH3 PbI3 precursor solution for inducing a P-type doping and downshifting its Fermi level. The lowered energy barrier at the interface of Au/doped CH3 NH3 PbI3 promotes the hot electron extraction, thereby enhancing the power conversion efficiency of IPHC devices. The FTO/TiO2 /Au/Na + -doped MAPbI3 construction with considerable photocurrent would be an alternative approach for light-to-electricity conversion. Graphical abstract: Image 1 Highlights: A novel IPHC device has been adopted to collect hot electrons under steady-state sunlight illumination. The location of the perovskite active layer is on the utmost outside of the collection structure of Au/TiO2 /FTO. The performance of this newly developed hot electron collection device is enhanced by P-type doping the perovskite layer. P-type doping is the effective way to boost the hot electron internal photoemission.