The CsPbI2Br Perovskite Solar Cell with High Open‐Circuit Voltage by Crystallization Optimization. Issue 8 (30th June 2022)

• Record Type: Journal Article
• Authors: Liu, Shanjing; Xu, Xinyu; Xing, Chuwu; Ge, Guanming; Wang, Duofa; Zhang, Tianjin
• Is Part Of: Energy technology. Volume 10:Issue 8(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-06-30
• Subjects: crystallization -- CsPbI2Br -- defects -- traps; Energy development -- Periodicals; Power resources -- Periodicals; 333.79
• DOI: 10.1002/ente.202200378
• Languages: English
• ISSNs: 2194-4288

Abstract

Abstract : All‐inorganic CsPbI2 Br perovskite acquires affirmation in recent years by reason of the excellent balance between stability and power conversion efficiency (PCE), but its PCE is still inferior to the commercial application standard, of which inferiority roots from the uncontrolled crystallization and a mass of the imperfections. Herein, the crystallization is regulated by introducing a certain amount of lead acetate into the precursor, and the complex Pb(Ac)2 × DMSO × PbI2 forms in precursor. The Oswald crystal pattern changes into the 2D layered structure —3D cubic structure crystal pattern, and this transition process is delayed, and the complex in precursor is regarded as the 2D crystal growth template. And the iodine vacancy defects are passivated by the Ac −, and the PbO passivates the grain boundary defects, as proved by the photoluminescence spectrum and X‐ray photoelectron spectroscopy. The two effects work together improve the performance of the CsPbI2 Br perovskite solar cells. The PCE increases from 9.78% to 13.73%, and the open‐circuit voltage increases from 1.23 to 1.32 V, which is one of the superior performances reported for the carbon‐based pure CsPbI2 Br perovskite solar cells to date. Abstract : Pb(Ac)2 is introduced into the CsPbI2 Br perovskite precursor, complex Pb(Ac)2 .DMSO × PbI2 formed in the precursor stabilizes the 2D growth template, the Oswald crystal pattern changes into the 2D—3D crystal pattern, and this transition process is delayed. The iodine vacancy defects are passivated by the Ac − ; the PbO passivates the grain boundary defects.